BZX79C4V3 Datasheet | Taiwan Semiconductor

FEATURES - Wide zener voltage range selection: 2.0V to 75V - VZ Tolerance selection of ±5% - Designed for through-hole device type mounting - Hermetically sealed glasss - Pb free and Ro HS pliant - High reliability glass passivation insuring parameter stability and protection against junction contamination MECHANICAL DATA - Case: DO-35 - High temperature soldering guaranteed: 260o C/10s - Polarity: Cathode indicated by polarity band - Weight : 109 ±4 mg (approximately) DO-35 Hermetically Sealed Glass MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) PARAMETER SYMBO VALUE Power Dissipation Forward Voltage IF = 100 m A PD VF 500 1.5 Thermal Resistance (Junction to Ambient) (Note 1) RθJA Junction and Storage Temperature Range TJ, TSTG - 65 to +175 Note 1: Valid provided that electrodes are kept at ambient temerature . UNIT m W V o C/W o C Zener I vs. V Characteristics VBR : Voltage at IZK IZK : Test current for voltage VBR ZZK : Dynamic impedance at IZK IZT : Test current for voltage VZ VZ : Voltage at current IZT ZZT : Dynamic impedance at IZT IZM : Maximum steady state current VZM : Voltage at IZM Document Number: DS_S1408013 Version: E14 Small Signal Product BZX79C2V0 thru BZX79C75 Taiwan Semiconductor ELECTRICAL CHARACTERISTICS ( TA= 25o C unless otherwise noted ) Part Number Marking code VZ @ IZT (Volt) Min Nom...