EGP30K Datasheet | Taiwan Semiconductor

Features 3.0 AMPS. Glass Passivated High Efficient Plastic Rectifiers Voltage Range 50 to 800 Volts Current 3.0 Amperes DO-201 Plastic material used carries Underwriters Laboratories Classification 94V-O Glass passivated cavity-free junction Superfast recovery time for high efficiency Low forward voltage, high current capability Low leakage current High surge current capability High temperature metallurgically bonded construction High temperature soldering guaranteed: 300℃ / 10seconds, .375”(9.5mm) lead length at 5 lbs., (2.3kg) tension Mechanical Data Case: JEDEC DO-201 molded plastic over solid glass body Lead: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting position: Any Weight: 0.048 ounce, 1.28 gram Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics Rating at 25℃ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number Symbol EGP EGP EGP EGP EGP EGP EGP 30A 30B 30D 30F 30G 30J 30K Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current 0.375”(9.5mm) Lead Length @ TA = 55℃ VRRM VRMS VDC I(AV) 50 100 200 300 400 600 800 35 70 140 210 280 420 560 50 100 200 300 400 600 800 Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) IFSM Maximum Instantaneous Forward Voltage @ 3.0A 1.25 1.7 Maximum DC Reverse Current @ TA=25℃ at Rated DC Blocking Voltage @ TA=125℃ 5.0 100 Maximum Reverse Recovery Time ( Note 1 ) TA=25o C Typical Junction Capacitance ( Note 2 ) Trr Cj 50 60 75 50 Typical Thermal Resistance (Note 3) RθJA Operating and Storage Temperature Range TJ TSTG -65 to + 150 Notes: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A 2. Measured at 1.0 MHz and Applied Reverse Voltage of...