Description
The TSG40N120CE using proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.
Features
- Block Diagram.
- 1200V NPT Trench Technology.
- High Speed Switching.
- Low Conduction Loss
Ordering Information
Part No. TSG40N120CE C0
Package
TO-264
Packing
25pcs / Tube
NPT Trench IGBT
Absolute Maximum Rating (TA=25oC unless otherwise noted)
Parameter
Symbol
Collector-Emitter Voltage Gate-Emitter Voltage
Continuous Current
TC=25oC TC=100oC
VCES VGES
IC
Pulsed Collector Current.
- Diode Forward Current (TC=100℃)
Diode Pulse Forward Current Max Power Dissipation
TJ.
G40N120CE Datasheet
