Part HER501G
Description Glass Passivated High Efficient Rectifiers
Manufacturer Taiwan Semiconductor
Size 166.37 KB
Taiwan Semiconductor
HER501G

Overview

  • 0 A Peak Forward Surge Current, 8.3 ms single half sine-wave superimposed on rated load (JEDEC method ) IFSM 200 A Maximum Instantaneous Forward Voltage @5.0A VF
  • 3 1.7 V Maximum DC Reverse Current @Ta=25 oC at Rated DC Blocking Voltage @ Ta=125 oC IR 10 uA 200 uA Maximum Reverse Recovery Time ( Note 1 ) Trr 50 75 nS Typical Junction Capacitance ( Note 2 ) Cj 100 65 pF Typical Thermal Resistance RθJA 40 Operating Temperature Range TJ -65 to +150 Storage Temperature Range TSTG -65 to +150 Notes:
  • Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
  • Measured at 1 MHz and applied reverse voltage of 4.0 V D.C.
  • Mount on Cu-Pad Size 16mm x 16mm on P.C.B.