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LLDB3TG Datasheet PDF

Taiwan Semiconductor LLDB3TG

150mW Bi-directional Trigger Diode

Part No. LLDB3TG
Datasheet LLDB3TG Download
Manufacturer
Taiwan Semiconductor
Description 150mW Bi-directional Trigger Diode
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LLDB3TG datasheet page 1 preview

FEATURES

- Surface mounted device - Hermetically sealed glass - Matte Tin(Sn) terminal finish - All external surfaces are corrosion resistant and terminals are readily solderable Not Recommended

MECHANICAL DATA

- Case: Mini-MELF package - High temperature soldering guaranteed: 260°C/10s - Weight: 29 ± 2.5 mg - Terminal: Pure tin plated, lead free, solderable per MIL-STD-202, method 208 guaranteed - Pb free and RoHS compliant Mini-MELF (LL34) Hermetically Sealed Glass

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

(TA=25℃ unless otherwise noted) PARAMETER SYMBOL VALUE Repetitive Peak Forward Current Pulse Width = 20µs IFRM Power Dissipation PD Thermal Resistance (Junction to Ambient) (Note) RθJA Junction and Storage Temperature Range TJ, TSTG Notes: Valid provided that electrodes are kept at ambient temperature 2 150 400 - 40 to + 125 UNIT A mW oC/W oC Break-Over Vol
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