M2N7000 Datasheet | Taiwan Semiconductor

Features - - Fast Switching Speed Low Input and Output Leakage Block Diagram Application - - Direct Logic-Level Interface: TTL/CMOS Solid-State Relays Ordering Information Part No. TSM2N7000CT B0 TSM2N7000CT A3 Package TO-92 TO-92 Packing 1Kpcs / Bulk 2Kpcs / Ammo N-Channel MOSFET Absolute Maximum Rating (Ta = 25o C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current ..net Symbol VDS VGS ID IDM a,b o o Limit 60 ±20 200 500 500 350 280 +150 -55 to +150 Unit V V m A m A m A m W o o Pulsed Drain Current Continuous Source Current (Diode Conduction) Maximum Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range Ta = 25 C Ta = 75 C IS PD TJ TJ, TSTG Thermal Performance Parameter Lead Temperature (1/8” from case) Junction to Ambient Thermal Resistance (PCB mounted) Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on FR4 Board, t ≤ 5 sec. Symbol TL RӨJA Limit 10 357 Unit S o C/W 1/4 Version: A07 TSM2N7000 60V N-Channel MOSFET Electrical Specifications (Ta = 25o C, unless otherwise...