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MBD4448HSDW Datasheet PDF

Taiwan Semiconductor MBD4448HSDW

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Part No. MBD4448HSDW
Datasheet MBD4448HSDW Download
Manufacturer
Taiwan Semiconductor
Description Switching Diode
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MBD4448HSDW datasheet page 1 preview

FEATURES

- Fast switching speed - Surface device type mounting - Moisture sensitivity level 1 - High conductance power dissipation - For general purpose switching applications - Pb free version and RoHS compliant - Packing code with suffix "G" means green compound (halogen-free)

MECHANICAL DATA

- Case: SOT-363 small outline plastic package - Terminal: Matte tin plated, lead free., solderable per MIL-STD-202, Method 208 guaranteed - High temperature soldering guaranteed : 260°C/10s SOT-363

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

(TA=25°C unless otherwise noted) PARAMETER SYMBOL VALUE Power Dissipation PD 200 Repetitive Peak Reverse Voltage Reverse Voltage VRRM VR 80 57 Average Rectified Forward Current IF(AV) 500 Average Rectified Output Current IO 250 Non-Repetitive Peak Forward Surge Current @ t = 1 μs @t=1s IFSM 4 1.5 Thermal Resistance (Junction to Ambient) RθJA 625 Junction and Storage Temperature Range TJ , TSTG -55 to 150 PARAMETER Reverse Breakdown Voltage IR=100μA IF=5.0...
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