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MBR25150CT

Manufacturer: Taiwan Semiconductor

This datasheet includes multiple variants, all published together in a single manufacturer document.

MBR25150CT datasheet preview

Datasheet Details

Part number MBR25150CT
Datasheet MBR25150CT MBR2545CT Datasheet (PDF)
File Size 199.14 KB
Manufacturer Taiwan Semiconductor
Description Dual Common Cathode Schottky Rectifier
MBR25150CT page 2 MBR25150CT page 3

MBR25150CT Overview

2- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PER LEG 8.3ms Single Half Sine Wave JEDEC Method 10 NUMBER OF CYCLES AT 60.

MBR25150CT Key Features

  • Low power loss, high efficiency
  • Guardring for overvoltage protection
  • High surge current capability
  • pliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC
  • Halogen-free according to IEC 61249-2-21 definition
  • halogen-free Base P/N with prefix "H" on packing code
  • 55 to +150
  • 55 to +150

MBR25150CT from other manufacturers

See all manufacturers

Brand Logo Part Number Description Other Manufacturers
JGD Logo MBR25150CT Dual Common Cathode Schottky Rectifiers JGD
LGE Logo MBR25150CT Schottky Barrier Rectifiers LGE
ETC MBR25150FCT 25AMPERES SCHOTTKY BARRIER RECTIFIERS ETC
Taiwan Semiconductor logo - Manufacturer

More Datasheets from Taiwan Semiconductor

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MBR20150CT Dual Common Cathode Schottky Rectifier
MBR20150CT-Y Dual Common Cathode Schottky Rectifier

MBR25150CT Distributor

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