MCR100-8 Datasheet | Taiwan Semiconductor

Features - Epitaxial planar die construction - Surface device type mounting - Moisture sensitivity level 1 - Matte Tin(Sn) lead finish with Nickel(Ni) underplate - Pb free version and Ro HS pliant - Green pound (Halogen free) with C suffix "G" on packing code and prefix "G" on date code Mechanical Data : TO-92 plastic package - Terminal: Matte tin plated, lead free., solderable per MIL-STD-202, Method 208 guaranteed - Weight : 0.19gram (approximately) - High temperature soldering guaranteed: 260 °C/10s - Case Ordering Information Package TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 Part No. MCR100-3 A1/A1G MCR100-4 A1/A1G MCR100-5 A1/A1G MCR100-6 A1/A1G MCR100-7 A1/A1G MCR100-8 A1/A1G Packing 4k/ box 4k/ box 4k/ box 4k/ box 4k/ box 4k/ box Dimensions A B C D E F G Unit (mm) Min 4.50 4.50 12.50 0.35 3.50 1.00 0.29 Max Unit (inch) Min Max 0.185 0.185 0.017 0.145 0.047 0.015 4.70 0.177 4.70 0.177 0.45 3.70 1.20 0.39 0.492 0.013 0.137 0.039 0.011 Rating at 25°C ambient temperature unless otherwise specified. Maximum Ratings and Electrical Characteristics Maximum Ratings Type Number Forward Current RMS(All Conduction Angles） Peak Repetitive Forward and Reverse Blocking Voltage（TJ=25℃ TO 125℃， RGK=1KΩ） Peak Forward Surge Current，TA=25℃ (1/2 Cycle，Sine Wave，60Hz） Circuit Fusing Considerations（t= 8.3 ms） Forward Peak Gate Power （TA=25℃，PW≤1 us） Forward Average Gate Power（TA=25℃) Forward Peak Gate Current（TA=25℃，PW≤1 us） Reverse Peak Gate Current（TA=25℃，PW≤1 us） Notes:1. Valid provided that electrodes are kept at ambient temperature Symbol IT(RMS) MCR100-3 MCR100-4 MCR100-5 V and VRRM MCR100-6 DRM MCR100-7 MCR100-8 ITSM I2t PGM PGF(AV) IGFM VGRM Value 0.8 100 200 300 400 500 600 10 0.415 0.1 0.01 1 5 Units A A As W W A V Version:B12 MCR100-3/MCR100-4/MCR100-5/MCR100-6/MCR100-7/MCR100-8 Thyristors Small Signal Diode Electrical Characteristics T a=25℃ Type Number Peak Forward or Reverse Blocking Current at VAK= Rated VDRM or VRRM Peak Forward On-State Voltage at ITM=1A...