• Part: RB751V-40
  • Description: 200mW 0.37V Schottky Barrier Diode
  • Manufacturer: Taiwan Semiconductor
  • Size: 315.38 KB
Download RB751V-40 Datasheet PDF
Taiwan Semiconductor
RB751V-40
RB751V-40 is 200mW 0.37V Schottky Barrier Diode manufactured by Taiwan Semiconductor.
Taiwan Semiconductor 200mW, 0.37V Schottky Barrier Diode Features - Designed for mounting on small surface - Low Capacitance - Low forward voltage drop - pliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 APPLICATIONS - Adapters - For switching power supply - Low stored charge - Inverter KEY PARAMETERS PARAMETER VALUE UNIT IF(AV) VRRM 30 mA IFSM VF at IF=1mA TJ Max. Package Configuration °C SOD-323 Single dice MECHANICAL DATA - Case: SOD-323 - Molding pound meets UL 94 V-0 flammability rating - Moisture sensitivity level: level 1, per J-STD-020 - Packing code with...