Taiwan Semiconductor SDBS15
Schottky Barrier Rectifiers
FEATURES
Metal to silicon rectifier, majority carrier conduction Low forward voltage drop Easy pick and place High surge current capability Plastic material used carriers Underwriters Laboratory Classification 94V-O Epitaxial construction High temperature soldering: o 260 C/ 10 seconds at terminals Small size, single installation lead solderable per MIL-STD-202 Method 208 DB DBS .047(1.20) .040(1.02) .205(5.2) .195(5.0)MECHANICAL DATA
Case: Molded plastic Terminals: Solder plated Polarity: Indicated by cathode band .404(10.3) .386(9.80) .335(8.51) .320(8.13) 45 0 .255(6.5) .245(6.2) .013(0.33) .0088(0.22) .130(3.30) .120(3.05) .060(1.53) .040(1.02) .013(0.33) .003(0.076) Dimensions in inches and (millimeters)MAXIMUM RATINGS
andELECTRICAL CHARACTERISTICS
Rating at 25℃ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Symbol SDB SDB SDB Type Number Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current at TL(See Fig.