TLD8S26AH - Surface Mount Transient Voltage Suppressor
Taiwan Semiconductor
Download the TLD8S26AH datasheet PDF.
This datasheet also covers the TLD8S10AH variant, as both devices belong to the same surface mount transient voltage suppressor family and are provided as variant models within a single manufacturer datasheet.
Key Features
AEC-Q101 qualified.
Junction passivation optimized design technology.
TJ =175 °C capability suitable for high reliability and automotive
requirement.
Moisture sensitivity level: level 1, per J-STD-020.
Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC.
Halogen-free according to IEC 61249-2-21.
Meets ISO7637-2 and ISO16750-2 surge specifications
(varied by test conditions).
Meets IEC 61000-4-2 (Level: 4) / ISO 10605 (Level: L4)
K.
Note: The manufacturer provides a single datasheet file (TLD8S10AH-TaiwanSemiconductor.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for TLD8S26AH (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
TLD8S26AH. For precise diagrams, and layout, please refer to the original PDF.
TLD8S10AH – TLD8S43AH Taiwan Semiconductor 6600W, 10V – 43V Surface Mount Transient Voltage Suppressor FEATURES ● AEC-Q101 qualified ● Junction passivation optimized desi...
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or FEATURES ● AEC-Q101 qualified ● Junction passivation optimized design technology ● TJ =175 °C capability suitable for high reliability and automotive requirement ● Moisture sensitivity level: level 1, per J-STD-020 ● Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 ● Meets ISO7637-2 and ISO16750-2 surge specifications (varied by test conditions) ● Meets IEC 61000-4-2 (Level: 4) / ISO 10605 (Level: L4) KEY PARAMETERS PARAMETER VALUE UNIT VWM 10 – 43 V VBR PPPM (10x1,000μs) PPPM (10x10,000μs) 11.1 – 52.8 6600 5200 V W W TJ MAX Package 175 °C DO-218AB AP
TLD8S26AH Datasheet
