TMBR6S05 - Silicon Bridge Rectifiers

Product Overview

Taiwan Semiconductor

Datasheet Details

Part number	TMBR6S05
Manufacturer	Taiwan Semiconductor
File Size	210.99 KB
Description	Silicon Bridge Rectifiers
Datasheet	TMBR6S05 Datasheet
Additional preview pages of the TMBR6S05 datasheet.

Product details

Description

Multiple manufacture source Multiple manufacture source Green compound Defined manufacture source Green compound PACKAGE OUTLINE DIMENSIONS TMB DIM.A B C E F G H J K L M Unit (mm) Min Max 4.50 4.70 3.60 3.80 1.20 Typ.0.45 0.65 2.60 2.80 0.60 0.80 0.05 0.15 0.20 Typ.6.60 7.00 5.10 5.50 0.90 1.10 Unit (inch) Min Max 0.177 0.185 0.142 0.150 0.049 Typ.0.018 0.026 0.102 0.110 0.024 0.031 0.002 0.006 0.008 Typ.0.260 0.276 0.201 0.217 0.035 0.043 Document Number: DS_S1412023 Version: B14 Sm

Features

- Ultra low leakage current IR < 2μA, TA = 125°C - No solder used, real fully in line with lead free - Package thickness is 1.2 mm - High ESD > 12 kV ( HBM model ) - Plastic material has U/L flammability classification 94V-0 - High temperature soldering guaranteed: 260°C/10s ( Reflow ) - High temperature soldering guaranteed: 350°C/ 3s ( Manual welding ).

📁 Similar Datasheet

TMBR6S05 - Voltage 600V 0.5Amp Silicon Bridge Rectifiers (SeCoS Halbleitertechnologie)
TMBR6S08 - Voltage 600V 0.8Amp Silicon Bridge Rectifiers (SeCoS Halbleitertechnologie)
TMBR10100CT - Ultra Low VF Schottky Rectifier (Bruckewell)
TMBR20100CT - Dual Common-Cathode Ultra Low VF Schottky Rectifier (Bruckewell)
TMBR2080CT - Ultra Low VF Schottky Rectifier (Bruckewell)
TMBR30100CT - Dual Common-Cathode Ultra Low VF Schottky Rectifier (Bruckewell)
TMBR30120CT - Dual Common-Cathode Ultra Low VF Schottky Rectifier (Bruckewell)
TMBR30150CT - Dual Common-Cathode Ultra Low VF Schottky Rectifier (Bruckewell)

Other Datasheets by Taiwan Semiconductor

Published: Apr 15, 2016 |