Taiwan Semiconductor TQM032NH04LCR
Power Transistor
| Part No. | TQM032NH04LCR |
|---|---|
| Datasheet | TQM032NH04LCR Download |
| Manufacturer |  Taiwan Semiconductor |
| Description | Power Transistor |
| Buy | Stock & Price |
FEATURES
● Excellent FOM● AEC-Q101 Qualified
● Wettable Flank leads for Enhanced AOI
● 100% UIS and Rg tested
● 175°C Operating Junction Temperature
● RoHS Compliant
● Halogen-Free
APPLICATIONS
● AutomotiveAPPLICATIONS
● Solenoid and Motor Drivers● DC-DC Converters PDFN56U TQM032NH04LCR Taiwan Semiconductor PRODUCT SUMMARY PARAMETER VALUE VDS 40 RDS(on) (max) Qg VGS = 10V VGS = 4.5V VGS = 4.5V 3.2 4.5 23.7 UNIT V mΩ nC Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 40 Gate-Source Voltage VGS ±16 Continuous Drain Current, Silicon limited TC = 25°C ID 143 Continuous Drain Current (Note 1) TC = 25°C 81 TC = 100°C ID 81 Pulsed Drain Current (Note 2) Single Pulse Avalanche Current (Note 3) Single Pulse Avalanche Energy (Note 3) TA = 25°C IDM IAS EAS 23 324 31.8 152 Total Power Dissipation TC = 25°C 115 PD TC = 125°C 38 Operating Junction and Storage Temperature Range TJ, TS...
