Taiwan Semiconductor TQM056NH04CR
Power Transistor
| Part No. | TQM056NH04CR |
|---|---|
| Datasheet | TQM056NH04CR Download |
| Manufacturer |  Taiwan Semiconductor |
| Description | Power Transistor |
| Buy | Stock & Price |
FEATURES
● Excellent FOM● AEC-Q101 Qualified
● Wettable Flank leads for Enhanced AOI
● 100% UIS and Rg tested
● 175°C Operating Junction Temperature
● RoHS Compliant
● Halogen-Free
APPLICATIONS
● AutomotiveAPPLICATIONS
● Solenoid and Motor Drivers● DC-DC Converters PDFN56U TQM056NH04CR Taiwan Semiconductor PRODUCT SUMMARY PARAMETER VALUE VDS 40 RDS(on) (max) Qg VGS = 10V VGS = 7V VGS = 10V 5.6 6.7 27.3 UNIT V mΩ nC Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 40 Gate-Source Voltage VGS ±20 Continuous Drain Current, Silicon limited TC = 25°C ID 90 Continuous Drain Current (Note 1) TC = 25°C 54 TC = 100°C ID 54 Pulsed Drain Current (Note 2) Single Pulse Avalanche Current (Note 3) Single Pulse Avalanche Energy (Note 3) TA = 25°C IDM IAS EAS 17 216 21.6 69.8 Total Power Dissipation TC = 25°C PD TC = 125°C 78.9 26.3 Operating Junction and Storage Temperature Range TJ, TST...
