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TSC2411D Datasheet PDF

Taiwan Semiconductor TSC2411D

General Purpose Dual NPN Transistor

Part No. TSC2411D
Datasheet TSC2411D Download
Manufacturer
Taiwan Semiconductor
Description General Purpose Dual NPN Transistor
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TSC2411D datasheet page 1 preview

FEATURES

Two TSC2411 chips in a STO-363 package Transistor elements are independent, eliminating interference Optimal for low voltage operation Ordering Information Part No. TSC2411DCU6 Packing 3kpcs / reel Package SOT-363 Marking 1PR Structure Epitaxial planar type. Mounting possible with SOT-323 automatic mounting machines. Complementary to TSA1036DCU6 Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation (note) Operating Junction Temperature Operating Junction and Storage Temperature Range Note: 1. 150mW per element must not be exceeded. Symbol VCBO VCEO VEBO IC PD TJ TSTG Limit 60V 40V 6 0.6 200 (total) +150 - 55 to +150 Unit V V V A mW o o C C

ELECTRICAL CHARACTERISTICS

(Ta = 25 oC unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector-Emitter Satur...
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