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TSCDT08065G1 Datasheet

Manufacturer: Taiwan Semiconductor
TSCDT08065G1 datasheet preview

Datasheet Details

Part number TSCDT08065G1
Datasheet TSCDT08065G1-TaiwanSemiconductor.pdf
File Size 376.28 KB
Manufacturer Taiwan Semiconductor
Description 650V SiC Merged PIN Schottky Diode
TSCDT08065G1 page 2 TSCDT08065G1 page 3

TSCDT08065G1 Overview

TSCDT08065G1 Taiwan Semiconductor 8A, 650V SiC Merged PIN Schottky Diode.

TSCDT08065G1 Key Features

  • Max junction temperature 175°C
  • MPS structure for high ruggedness to forward current
  • High-speed switching possible
  • High forward surge capability
  • High-frequency operation
  • Positive temperature coefficient on VF
  • RoHS pliant
  • Halogen-free
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