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TSCDT08065G1 - 650V SiC Merged PIN Schottky Diode

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Description

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Features

  • Max junction temperature 175°C.
  • MPS structure for high ruggedness to forward current surge events.
  • High-speed switching possible.
  • High forward surge capability.
  • High-frequency operation.
  • Positive temperature coefficient on VF.
  • RoHS compliant.
  • Halogen-free KEY.

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Datasheet preview – TSCDT08065G1

Datasheet Details

Part number TSCDT08065G1
Manufacturer Taiwan Semiconductor
File Size 376.28 KB
Description 650V SiC Merged PIN Schottky Diode
Datasheet download datasheet TSCDT08065G1 Datasheet
Additional preview pages of the TSCDT08065G1 datasheet.

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Full PDF Text Transcription

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TSCDT08065G1 Taiwan Semiconductor 8A, 650V SiC Merged PIN Schottky Diode FEATURES ● Max junction temperature 175°C ● MPS structure for high ruggedness to forward current surge events ● High-speed switching possible ● High forward surge capability ● High-frequency operation ● Positive temperature coefficient on VF ● RoHS compliant ● Halogen-free KEY PARAMETERS PARAMETER VALUE UNIT IF 8 A VRRM 650 V IFSM 72 A TJ MAX 175 °C Package TO-220AC-2L Configuration Single die APPLICATIONS ● General purpose ● Switch mode power supplies ● Power factor correction MECHANICAL DATA ● Case: TO-220AC-2L ● Molding compound meets UL 94V-0 flammability rating ● Terminal: Matte tin plated leads, solderable per J-STD-002 ● Polarity: As circuit diagram ● Weight: 2.
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