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TSCDT12065G1 - 650V SiC Merged PIN Schottky Diode

General Description

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Key Features

  • Max junction temperature 175°C.
  • MPS structure for high ruggedness to forward current surge events.
  • High-speed switching possible.
  • High forward surge capability.
  • High-frequency operation.
  • Positive temperature coefficient on VF.
  • RoHS compliant.
  • Halogen-free KEY.

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TSCDT12065G1 Taiwan Semiconductor 12A, 650V SiC Merged PIN Schottky Diode FEATURES ● Max junction temperature 175°C ● MPS structure for high ruggedness to forward current surge events ● High-speed switching possible ● High forward surge capability ● High-frequency operation ● Positive temperature coefficient on VF ● RoHS compliant ● Halogen-free KEY PARAMETERS PARAMETER VALUE UNIT IF 12 A VRRM 650 V IFSM 88 A TJ MAX 175 °C Package TO-220AC-2L Configuration Single die APPLICATIONS ● General purpose ● Switch mode power supplies ● Power factor correction MECHANICAL DATA ● Case: TO-220AC-2L ● Molding compound meets UL 94V-0 flammability rating ● Terminal: Matte tin plated leads, solderable per J-STD-002 ● Polarity: As circuit diagram ● Weight: 2.