• Part: TSCDT12065G1
  • Description: 650V SiC Merged PIN Schottky Diode
  • Category: Diode
  • Manufacturer: Taiwan Semiconductor
  • Size: 377.48 KB
Download TSCDT12065G1 Datasheet PDF
Taiwan Semiconductor
TSCDT12065G1
FEATURES - Max junction temperature 175°C - MPS structure for high ruggedness to forward current surge events - High-speed switching possible - High forward surge capability - High-frequency operation - Positive temperature coefficient on VF - Ro HS pliant - Halogen-free KEY PARAMETERS PARAMETER VALUE UNIT VRRM IFSM TJ MAX °C Package TO-220AC-2L Configuration Single die APPLICATIONS - General purpose - Switch mode power supplies - Power factor correction MECHANICAL DATA - Case: TO-220AC-2L - Molding pound meets UL 94V-0 flammability rating - Terminal: Matte tin plated leads, solderable per J-STD-002 - Polarity: As circuit diagram - Weight: 2.03g (approximately) TO-220AC-2L ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL VALUE Repetitive peak reverse...