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TSCDT20065G1 - 650V SiC Merged PIN Schottky Diode

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Description

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Features

  • Max junction temperature 175°C.
  • MPS structure for high ruggedness to forward current surge events.
  • High-speed switching possible.
  • High forward surge capability.
  • High-frequency operation.
  • Positive temperature coefficient on VF.
  • RoHS compliant.
  • Halogen-free KEY.

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Datasheet preview – TSCDT20065G1

Datasheet Details

Part number TSCDT20065G1
Manufacturer Taiwan Semiconductor
File Size 378.23 KB
Description 650V SiC Merged PIN Schottky Diode
Datasheet download datasheet TSCDT20065G1 Datasheet
Additional preview pages of the TSCDT20065G1 datasheet.

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Full PDF Text Transcription

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TSCDT20065G1 Taiwan Semiconductor 20A, 650V SiC Merged PIN Schottky Diode FEATURES ● Max junction temperature 175°C ● MPS structure for high ruggedness to forward current surge events ● High-speed switching possible ● High forward surge capability ● High-frequency operation ● Positive temperature coefficient on VF ● RoHS compliant ● Halogen-free KEY PARAMETERS PARAMETER VALUE UNIT IF 20 A VRRM 650 V IFSM 128 A TJ MAX 175 °C Package TO-220AC-2L Configuration Single die APPLICATIONS ● General purpose ● Switch mode power supplies ● Power factor correction MECHANICAL DATA ● Case: TO-220AC-2L ● Molding compound meets UL 94V-0 flammability rating ● Terminal: Matte tin plated leads, solderable per J-STD-002 ● Polarity: As circuit diagram ● Weight: 2.
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