Download TSCDT20065G1 Datasheet PDF
TSCDT20065G1 page 2
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TSCDT20065G1 page 3
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TSCDT20065G1 Key Features

  • Max junction temperature 175°C
  • MPS structure for high ruggedness to forward current
  • High-speed switching possible
  • High forward surge capability
  • High-frequency operation
  • Positive temperature coefficient on VF
  • RoHS pliant
  • Halogen-free

TSCDT20065G1 Description

TSCDT20065G1 Taiwan Semiconductor 20A, 650V SiC Merged PIN Schottky Diode.