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TSH253 - High Sensitivity Omni-Polar Hall Effect Switch

General Description

TSH253 Hall-effect sensor is a temperature stable, stress-resistant switch.

Superior high-temperature performance is made possible through a dynamic offset cancellation that utilizes chopper-stabilization.

Key Features

  • CMOS Hall IC Technology.
  • Solid-State Reliability much better than reed switch.
  • Omni polar output switches with absolute value of North or South pole from magnet.
  • High Sensitivity for reed switch replacement.
  • Operation down to 1.8 V and Max at 6V.
  • ESD HBM ±4kV Min.
  • RoHS Compliant.
  • Halogen-free according to IEC 61249-2-21.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TSH253 Taiwan Semiconductor High Sensitivity Omni-Polar Hall Effect Switch DESCRIPTION TSH253 Hall-effect sensor is a temperature stable, stress-resistant switch. Superior high-temperature performance is made possible through a dynamic offset cancellation that utilizes chopper-stabilization. This method reduces the offset voltage normally caused by device over molding, temperature dependencies, and thermal stress. TSH253 includes the following on a single silicon chip: voltage regulator, Hall voltage generator, small-signal amplifier, chopper stabilization, Schmitt trigger, open-drain output. Advanced CMOS wafer fabrication processing is used to take advantage of low-voltage requirements, component matching, very low input-offset errors, and small component geometries.