Taiwan Semiconductor TSM2N60S
The TSM2N60S is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. The new energy efficient design also offers a drain- to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients.| Part No. | TSM2N60S |
|---|---|
| Datasheet | TSM2N60S Download |
| Manufacturer |  Taiwan Semiconductor |
| Description | 600V N-Channel Power MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes.FEATURES
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● Robust high voltage termination Avalanche energy specified Diode is characterized for use in bridge circuits Source to Drain diode recovery time comparable to a discrete fast recovery diode. Block Diagram Ordering Information Part No. TSM2N60SCW RP Package SOT-223 Packing 2.5Kpcs / 13” Reel N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction) Drain Source Voltage Slope (VDS = 480V, ID=0.8A, TJ = 125 C) Total Maximum Power Dissipation @Ta = 25 C Operating Junction Temperature Operating Junction and Storage Temperature Range o o Symbol VDS VGS ID IDM IS dv/dt PDTOT TJ TJ, TSTG Limit 600 ±30 0.6 1.5 1 50 2.5 +150 -55 to +150 Unit V V A A A V/ns W ºC ºC
THERMAL PERFORMANCE
Parameter The...
