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TSM2NB60CP - N-Channel Power MOSFET

Features

  • Advanced planar process.
  • 100% avalanche tested.
  • Pb-free plating.
  • Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC.
  • Halogen-free according to IEC 61249-2-21.

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Datasheet preview – TSM2NB60CP

Datasheet Details

Part number TSM2NB60CP
Manufacturer Taiwan Semiconductor
File Size 834.54 KB
Description N-Channel Power MOSFET
Datasheet download datasheet TSM2NB60CP Datasheet
Additional preview pages of the TSM2NB60CP datasheet.

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Full PDF Text Transcription

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TSM2NB60CP TSM2NB60CH Taiwan Semiconductor N-Channel Power MOSFET 600V, 2A, 4.4Ω FEATURES ● Advanced planar process ● 100% avalanche tested ● Pb-free plating ● Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 APPLICATION ● Power Supply ● Lighting KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS 600 V RDS(on) (max) 4.4 Ω Qg 9.
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