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TSM300NB06DCR - Dual N-Channel Power MOSFET

Key Features

  • Low RDS(ON) to minimize conductive losses.
  • Low gate charge for fast power switching.
  • 100% UIS and Rg tested.
  • RoHS Compliant.
  • Halogen-free according to IEC 61249-2-21.

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TSM300NB06DCR Taiwan Semiconductor Dual N-Channel Power MOSFET 60V, 25A, 30mΩ FEATURES ● Low RDS(ON) to minimize conductive losses ● Low gate charge for fast power switching ● 100% UIS and Rg tested ● RoHS Compliant ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● BLDC Motor Control ● Battery Power Management ● DC-DC Converter ● Secondary Synchronous Rectification PDFN56 Dual KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS 60 V VGS = 10V 30 RDS(on) (max) mΩ VGS = 7V 42.