• Part: TSM300NB06DCR
  • Description: Dual N-Channel Power MOSFET
  • Category: MOSFET
  • Manufacturer: Taiwan Semiconductor
  • Size: 292.24 KB
Download TSM300NB06DCR Datasheet PDF
Taiwan Semiconductor
TSM300NB06DCR
FEATURES - Low RDS(ON) to minimize conductive losses - Low gate charge for fast power switching - 100% UIS and Rg tested - Ro HS pliant - Halogen-free according to IEC 61249-2-21 APPLICATIONS - BLDC Motor Control - Battery Power Management - DC-DC Converter - Secondary Synchronous Rectification PDFN56 Dual KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VGS = 10V RDS(on) (max) mΩ VGS = 7V Qg 17 n C Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage Gate-Source Voltage ±20 Continuous Drain Current (Note 1) TC = 25°C TA = 25°C 25 6 Pulsed Drain Current Single Pulse Avalanche Current (Note 2) Single Pulse Avalanche Energy (Note...