Taiwan Semiconductor TSM3424
30V N-Channel MOSFET
FEATURES
● Advance Trench Process Technology● High Density Cell Design for Ultra Low On-resistance Application
● Load Switch
● PA Switch Ordering Information Block Diagram Part No. Package Packing TSM3424CX6 RF SOT-26 3Kpcs / 7” Reel TSM3424CX6 RFG SOT-26 3Kpcs / 7” Reel Note: “G” denote for Halogen Free Product N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction)a,b Maximum Power Dissipation Ta = 25oC Ta = 75oC VDS VGS ID IDM IS PD 30 ±20 6.7 30 1.7 2.0 1.3 Operating Junction Temperature Operating Junction and Storage Temperature Range TJ TJ, TSTG +150 -55 to +150 The