Taiwan Semiconductor TSM3460
20V N-Channel MOSFET
| Part No. | TSM3460 |
|---|---|
| Datasheet | TSM3460 Download |
| Manufacturer |  Taiwan Semiconductor |
| Description | 20V N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
Advanced trench process technology High density cell design for ultra low on-resistance Excellent thermal and electrical capabilities Specially designed for Li-ion battery packs. Battery switch application Block Diagram Ordering Information Part No. TSM3460CX6 Packing Tape & Reel 3,000/per reel Package SOT-26 Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @4.5V. Ta = 25 C Ta = 70 oC Pulsed Drain Current, VGS @4.5V Diode Forward Current Maximum Power Dissipation Ta = 25 oC Ta = 70 oC Operating Junction and Storage Temperature Range TJ, TSTG o Symbol VDS VGS ID ID IDM Is PD Limit 20V ± 12 6 5 30 1.5 1.3 0.96 - 55 to +150 Unit V V A A A A W o CTHERMAL PERFORMANCE
Parameter Junction to Foot (Drain) Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Note: Surface mounted on FR4 board t<=300uS, Duty < 2%. Symbol Rθjf Rθja Limit 35 120 Unit o o C/W C/W TSM3460 1-1 2003/12 rev.
