Taiwan Semiconductor TSM4435B
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.| Part No. | TSM4435B |
|---|---|
| Datasheet | TSM4435B Download |
| Manufacturer |  Taiwan Semiconductor |
| Description | 30V P-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
●● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram Application
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● DC-DC Conversion Battery Switch Ordering Information Part No. TSM4435BCS RL Package SOP-8 Packing 2.5Kpcs / 13” Reel P-Channel MOSFET TSM4435BCS RLG SOP-8 2.5Kpcs / 13” Reel Note: “G” denote for Halogen Free Product Absolute Maximum Rating (TA = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction) Maximum Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range a,b o o Symbol VDS VGS ID IDM IS PD TJ TJ, TSTG Ta = 25 C Ta = 75 C Limit -30 ±20 -9.1 -50 -2.1 2.5 1.6 +150 - 55 to +150 Unit V V A A A W o o C C
THERMAL PERFORMANCE
Parameter Junction to Foot (Drain) Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on FR4 Board, t ≤ 10 sec.
