TSM4946DCS
FEATURES
- Advance Trench Process Technology
- High Density Cell Design for Ultra Low On-resistance
- Ro HS pliant
- Halogen-free
APPLICATIONS
- High-Side DC/DC Conversion
- Notebook
- Sever
SOP-8
KEY PERFORMANCE PARAMETERS
PARAMETER
VALUE
UNIT
RDS(on) (max)
55 mΩ
Qg
21 n C
Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
Gate-Source Voltage
±20
Continuous Drain Current, Silicon limited TC = 25°C
Continuous Drain Current (Note 1)
TC = 25°C
Pulsed Drain Current
Total Power Dissipation
TA = 25°C
TA =...
