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TSM4946DCS
Taiwan Semiconductor
N-Channel Power MOSFET
60V, 5.9A, 55mΩ
FEATURES
● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance ● RoHS Compliant ● Halogen-free
APPLICATIONS
● High-Side DC/DC Conversion ● Notebook ● Sever
SOP-8
KEY PERFORMANCE PARAMETERS
PARAMETER
VALUE
UNIT
VDS
60
V
RDS(on) (max)
55
mΩ
Qg
21
nC
Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
60
Gate-Source Voltage
VGS
±20
Continuous Drain Current, Silicon limited TC = 25°C
ID
5.9
Continuous Drain Current (Note 1)
TC = 25°C
ID
4.5
Pulsed Drain Current
IDM
30
Total Power Dissipation
TA = 25°C
2
PD
TA = 75°C
1.
TSM4946DCS Datasheet
