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TSM70N1R4 - N-Channel Power MOSFET

Description

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Features

  • Super-Junction technology.
  • High performance due to small figure-of-merit.
  • High ruggedness performance.
  • High commutation performance.

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Full PDF Text Transcription

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7 TSM70N1R4 Taiwan Semiconductor N-Channel Power MOSFET 700V, 3.3A, 1.4Ω FEATURES ● Super-Junction technology ● High performance due to small figure-of-merit ● High ruggedness performance ● High commutation performance APPLICATION ● Power Supply ● Lighting KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS RDS(on) (max) Qg 700 V 1.4 Ω 7.7 nC TO-251 (IPAK) TO-252 (DPAK) Notes: Moisture sensitivity level: level 3.
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