Datasheet4U Logo Datasheet4U.com

TSM900N10 - N-Channel Power MOSFET

Datasheet Summary

Description

only.

No license, express or implied, to any intellectual property rights is granted by this document.

Features

  • 100% avalanche tested.
  • Low gate charge for fast switching.
  • Pb-free plating.
  • RoHS compliant.
  • Halogen-free mold compound.

📥 Download Datasheet

Datasheet preview – TSM900N10

Datasheet Details

Part number TSM900N10
Manufacturer Taiwan Semiconductor
File Size 403.65 KB
Description N-Channel Power MOSFET
Datasheet download datasheet TSM900N10 Datasheet
Additional preview pages of the TSM900N10 datasheet.

📁 Similar Datasheet

  • TSM9117 - 1.6V Nanopower Comparators (Touchstone Semiconductor)
  • TSM9117 - 1.6V Nanopower Comparators with/without Internal References (Silicon Laboratories)
  • TSM9118 - 1.6V Nanopower Comparators (Touchstone Semiconductor)
  • TSM9118 - 1.6V Nanopower Comparators with/without Internal References (Silicon Laboratories)
  • TSM9119 - 1.6V Nanopower Comparators (Touchstone Semiconductor)
  • TSM9119 - 1.6V Nanopower Comparators with/without Internal References (Silicon Laboratories)
  • TSM9120 - 1.6V Nanopower Comparators (Touchstone Semiconductor)
  • TSM9120 - 1.6V Nanopower Comparators with/without Internal References (Silicon Laboratories)
  • TSM915AW-6 - SAW Filter (Sanyo Semicon Device)
  • TSM917 - 1.8V Nanopower Comparator (Touchstone Semiconductor)
Other Datasheets by Taiwan Semiconductor

Full PDF Text Transcription

Click to expand full text
TSM900N10 Taiwan Semiconductor N-Channel Power MOSFET 100V, 15A, 90mΩ FEATURES ● 100% avalanche tested ● Low gate charge for fast switching ● Pb-free plating ● RoHS compliant ● Halogen-free mold compound APPLICATION ● Networking ● Load Switching ● LED Lighting Control ● AC-DC Secondary Rectification TO-251S (IPAK SL) KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS RDS(on) (max) VGS = 10V VGS = 4.5V Qg 100 90 100 9.3 V mΩ nC TO-252 (DPAK) Notes: Moisture sensitivity level: level 3.
Published: |