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TSM900N10 - N-Channel Power MOSFET

General Description

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Key Features

  • 100% avalanche tested.
  • Low gate charge for fast switching.
  • Pb-free plating.
  • RoHS compliant.
  • Halogen-free mold compound.

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Other Datasheets by Taiwan Semiconductor

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TSM900N10 Taiwan Semiconductor N-Channel Power MOSFET 100V, 15A, 90mΩ FEATURES ● 100% avalanche tested ● Low gate charge for fast switching ● Pb-free plating ● RoHS compliant ● Halogen-free mold compound APPLICATION ● Networking ● Load Switching ● LED Lighting Control ● AC-DC Secondary Rectification TO-251S (IPAK SL) KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS RDS(on) (max) VGS = 10V VGS = 4.5V Qg 100 90 100 9.3 V mΩ nC TO-252 (DPAK) Notes: Moisture sensitivity level: level 3.