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TSM950N10CW
Taiwan Semiconductor
N-Channel Power MOSFET
100V, 6.5A, 95mΩ
FEATURES
● Fast switching ● Pb-free plating ● RoHS compliant ● Halogen-free mold compound
APPLICATION
● Networking ● Load Switch ● Lighting
KEY PERFORMANCE PARAMETERS
PARAMETER
VALUE UNIT
VDS
RDS(on) (max)
VGS = 10V VGS = 4.5V
Qg
100 95 110 9.3
V mΩ nC
SOT-223
Note: MSL 3 (Moisture Sensitivity Level) per J-STD-020
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS 100
Gate-Source Voltage Continuous Drain Current (Note 1) Pulsed Drain Current (Note 2)
TC = 25°C TC = 100°C
VGS ID IDM
±20 6.5 4.