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TSP15U50S - Trench MOS Barrier Schottky Rectifier

Description

FIG.

Features

  • - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Ideal for automated placement - Moisture sensitivity level : level 1, per J-STD-020 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition TO-277A(SMPC).

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Datasheet Details

Part number TSP15U50S
Manufacturer Taiwan Semiconductor
File Size 199.55 KB
Description Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet TSP15U50S Datasheet
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TSP15U50S Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Ideal for automated placement - Moisture sensitivity level : level 1, per J-STD-020 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition TO-277A(SMPC) MECHANICAL DATA Case：TO-277A(SMPC) Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix "G" on packing code - halogen-free, RoHS compliant Terminal：Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test Polarity：Indicated by cathode band Weight： 0
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