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TSSA3U45 - Trench MOS Barrier Schottky Rectifier

Description

FIG.

Features

  • - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Moisture sensitivity level: level 1, per J-STD-020 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition.

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Full PDF Text Transcription

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TSSA3U45 Taiwan Semiconductor FEATURES - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Moisture sensitivity level: level 1, per J-STD-020 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA Case: DO-214AC(SMA) Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix "G" on packing code - halogen-free, RoHS compliant Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test.
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