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TSSA3U45 Datasheet Trench MOS Barrier Schottky Rectifier

Manufacturer: Taiwan Semiconductor

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TSSA3U45 trench mos barrier schottky rectifier by Taiwan Semiconductor - Datasheet Preview

Datasheet Details

Part number	TSSA3U45
Manufacturer	Taiwan Semiconductor
File Size	163.93 KB
Description	Trench MOS Barrier Schottky Rectifier
Download	TSSA3U45 Download (PDF)

Overview

TSSA3U45 Taiwan Semiconductor.

Key Features

- Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Moisture sensitivity level: level 1, per J-STD-020 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition.

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