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TSSD10L100SW - Trench Schottky Rectifier

General Description

Green compound 2 Version:B1704 TSSD10L100SW - TSSD10L200SW Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve 15 Fig.2 Typical Junction Capacitance 10000 TSSD10L100SW 10 1000 CAPACITANCE (pF) AVERAGE FORWARD CURRENT (A) 5 10

Key Features

  • Patented Trench Schottky technology.
  • Low power loss / high efficiency.
  • Ideal for automated placement.
  • Guard ring for over-voltage protection.
  • High forward surge capability.
  • Compliant to RoHS directive 2011/65/EU and In accordance to WEEE 2002/96/EC.
  • Halogen-free according to IEC 61249-2-21.

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TSSD10L100SW - TSSD10L200SW Taiwan Semiconductor 10A, 100V - 200V Trench Schottky Rectifier FEATURES ● Patented Trench Schottky technology ● Low power loss / high efficiency ● Ideal for automated placement ● Guard ring for over-voltage protection ● High forward surge capability ● Compliant to RoHS directive 2011/65/EU and In accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● Switching mode power supply (SMPS) ● Adapters ● Lighting application ● On-board DC/DC converter KEY PARAMETERS PARAMETER VALUE UNIT IF(AV) VRRM IFSM TJ MAX Package 10 A 100 - 200 V 120 A 150 °C TO-252 (D-PAK) Configuration Single die MECHANICAL DATA ● Case: TO-252 (D-PAK) ● Molding compound meets UL 94V-0 flammability rating ● Packing code with suffix "G" means green