TST20L60CW Datasheet | Taiwan Semiconductor

FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Low power loss/ High efficiency - High forward surge capability - pliant to Ro HS directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition TYPICAL APPLICATIONS Trench Schottky barrier rectifier are designed for high frequency miniature switched mode power supplies such as adapters, lighting and on-board DC/DC converters. TO-220AB MECHANICAL DATA Case: TO-220AB Molding pound meets UL 94 V-0 flammability rating Packing code with suffix "G" means green pound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test Polarity: As marked Mounting torque: 0.56 Nm max. Weight: 1.88 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL Maximum repetitive peak reverse voltage VRRM Maximum average forward rectified current per device per diode IF(AV) 20 10 Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load per diode IFSM Voltage rate of change (Rated VR) Instantaneous forward voltage per diode (Note1) IF = 10A IF = 20A IF = 10A IF = 20A TJ = 25°C TJ = 125°C Instantaneous reverse current per diode at rated reverse voltage Typical thermal resistance per diode TJ= 25°C TJ = 125°C Operating junction temperature range Storage temperature range Note 1: Pulse test with pulse width = 300μs, 1% duty cycle d V/dt IR RθJC TJ TSTG MIN. - 10000 TYP. 0.56 0.69 0.52 0.67 - 55 to...