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TFP7N60 - N-Channel Power MOSFET

General Description

The N-Channel MOSFET is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance.

Key Features

  • Robust high voltage termination Avalanche energy specified Diode is characterized for use in bridge circuits Source to Drain diode recovery time comparable to a discrete fast recovery diode. D G S.

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Datasheet Details

Part number TFP7N60
Manufacturer Tak Cheong Electronics
File Size 340.39 KB
Description N-Channel Power MOSFET
Datasheet download datasheet TFP7N60 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TAK CHEONG ® SEM ICON DU CTO R 7A, 600V, 1.2Ω GENERAL DESCRIPTION The N-Channel MOSFET is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance. This device is well suited for high efficiency switched mode power suppliers, active power factor correction, electronic lamp ballasts based half bridge topology.