Datasheet4U Logo Datasheet4U.com

TDM2306 - N-Channel Enhancement Mode MOSFET

Datasheet Summary

Description

voltages as low as 2.5V.

Features

  • VDS = 30V,ID = 5A RDS(ON) < 50mΩ @ VGS=2.5V RDS(ON) < 35mΩ @ VGS=4.5V RDS(ON) < 30mΩ @ VGS=10V.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package.

📥 Download Datasheet

Datasheet preview – TDM2306

Datasheet Details

Part number TDM2306
Manufacturer Techcode
File Size 322.11 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet TDM2306 Datasheet
Additional preview pages of the TDM2306 datasheet.

📁 Similar Datasheet

  • TDM150 - Twin Diode Module (Microsemi Corporation)
  • TDM15002 - Twin Diode Module (Microsemi Corporation)
  • TDM15004 - Twin Diode Module (Microsemi Corporation)
  • TDM15006 - Twin Diode Module (Microsemi Corporation)
  • TDM15008 - Twin Diode Module (Microsemi Corporation)
  • TDM15010 - Twin Diode Module (Microsemi Corporation)
  • TDM15012 - Twin Diode Module (Microsemi Corporation)
  • TDM300 - Twin Diode Module (Microsemi Corporation)
  • TDM30002 - Twin Diode Module (Microsemi Corporation)
  • TDM30004 - Twin Diode Module (Microsemi Corporation)
Other Datasheets by Techcode
  • TDM2301 - P-Channel Enhancement Mode MOSFET
  • TDM2301S - P-Channel Enhancement Mode MOSFET
  • TDM2302 - N-Channel Enhancement Mode MOSFET
  • TDM2302S - N-Channel Enhancement Mode MOSFET
  • TDM2305 - P-Channel Enhancement Mode MOSFET
  • TDM31010 - N-Channel Enhancement Mode MOSFET
  • TDM31026 - N-Channel Enhancement Mode MOSFET
  • TDM31028 - N-Channel Enhancement Mode MOSFET

Full PDF Text Transcription

Click to expand full text
    N-Channel Enhancement Mode Power MOSFET   Datasheet TDM2306 DESCRIPTION  The TDM2306 uses advanced trench technology to provide  excellent R , low gate charge and operation with gate  DS(ON)  voltages as low as 2.5V.  GENERAL FEATURES ● VDS = 30V,ID = 5A RDS(ON) < 50mΩ @ VGS=2.5V RDS(ON) < 35mΩ @ VGS=4.
Published: |