Techcode TDM2306
The TDM2306 uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) voltages as low as 2.5V.| Part No. | TDM2306 |
|---|---|
| Datasheet | TDM2306 Download |
| Manufacturer |  Techcode |
| Description | N-Channel Enhancement Mode MOSFET |
| Buy | Stock & Price |
DESCRIPTION
GENERAL FEATURES
● VDS = 30V,ID = 5A RDS(ON) < 50mΩ @ VGS=2.5V RDS(ON) < 35mΩ @ VGS=4.5V RDS(ON) < 30mΩ @ VGS=10V● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package Application
●PWM applications
●Load switch
●Power management Schematic diagram Marking and pin Assignment SOT-23 top view
ABSOLUTE MAXIMUM RATINGS
(TA=25℃unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM PD TJ,TSTG Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RθJAELECTRICAL CHARACTERISTICS
(TA=25℃unless otherwise noted) Parameter Symbol Condition Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA Zero Gate Voltage Drain Current IDSS VDS=30V,VGS=0V Limit 30 ±20 5 20 1.38 -55 To 150 Unit V V A A W ℃ 90 ℃/W Min Typ Max Unit 30 V 1 μA October, 20, 2010.
