Techcode TDM3302
The TDM3302 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.| Part No. | TDM3302 |
|---|---|
| Datasheet | TDM3302 Download |
| Manufacturer |  Techcode |
| Description | N-Channel Enhancement Mode MOSFET |
| Buy | Stock & Price |
DESCRIPTION
GENERAL FEATURES
● 30V/100A RDS(ON) <1.1mΩ @ VGS=10V RDS(ON) <1.7mΩ @ VGS=4.5V● Reliable and Rugged
● Lower Qg and Qgd for high‐speed switching
● Lower RDS(ON) to Minimize Conduction Losses
● Surface Mount Package
● Lead Free and Green Devices available(RoHS Compliant) Application
● OR‐ing
● Synchronous Rectifier for Server
● Battery Charger and Power Circuits
ABSOLUTE MAXIMUM RATINGS
(TA=25℃unless otherwise noted) Parameter Drain‐Source Voltage Gate‐Source Voltage Diode Continuous Forward Current Drain Current @ Continuous (Note 1) Drain Current @ Current‐Pulsed (Note 2) Maximum Power Dissipation Drain Current @ Continuous (Note 3) Maximum Power Dissipation(Note 3) Avalanche Energy, Single pulse (Note 4) Thermal Resistance,Junction‐to‐Ambient (Note 3) Thermal Resistance,Junction‐to‐Case Maximum Operating Junction Temperature Storage Temperature Range Symbol VDS VGS IS（TC=25℃） ID（TC=25℃） ID（TC=100℃） IDM（TC=25℃） PD(TC=25℃) PD(TC=100℃) ID（TA=25℃） ID（TA=70℃） PD(TA=25℃) PD(TA=7...
