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TDM3407 - P-Channel Enhancement Mode MOSFET

Description

The  TDM3407  uses  advanced  trench  technology  to  provide  excellent  RDS(ON)  and  low  gate  charge.

This device is suitable for use as a load switch or in  PWM applications.

Features

  • ‐40V PMOS .
  • RDS(ON) .

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Datasheet preview – TDM3407

Datasheet Details

Part number TDM3407
Manufacturer Techcode
File Size 635.87 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet TDM3407 Datasheet
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Full PDF Text Transcription

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T  echcode®       P-Channel Enhancement Mode MOSFET DESCRIPTION  The  TDM3407  uses  advanced  trench  technology  to  provide  excellent  RDS(ON)  and  low  gate  charge.  This device is suitable for use as a load switch or in  PWM applications.  GENERAL FEATURES   ‐40V PMOS   RDS(ON) < 17mΩ @ VGS=‐4.5V  RDS(ON) < 11mΩ @ VGS=‐10V  RDS(ON) < 9.
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