Techcode TDM3478
The TDM3478 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.| Part No. | TDM3478 |
|---|---|
| Datasheet | TDM3478 Download |
| Manufacturer |  Techcode |
| Description | N-Channel Enhancement Mode MOSFET |
| Buy | Stock & Price |
DESCRIPTION
GENERAL FEATURES
● RDS(ON) < 9.7mΩ @ VGS=4.5V RDS(ON) < 6mΩ @ VGS=10V● High Power and current handling capability
● ESD Protection
● Surface Mount Package
● Lead Free and Green Devices available(RoHS Compliant) Application
● PWM applications
● Load switch
● Power management
● Powered Systems DATASHEET TDM3478 PPAK-3*3-8
ABSOLUTE MAXIMUM RATINGS
(TA=25℃unless otherwise noted) Parameter Symbol Drain‐Source Voltage VDS Gate‐Source Voltage VGS Drain Current @ Continuous ID（Tc=25℃） ID（Tc=100℃） Drain Current @ Current‐Pulsed (Note 1) IDP（TC=25℃） Maximum Power Dissipation PD (TC=25℃) PD (TC=100℃) Drain Current @ Continuous ID（TA=25℃） ID（TA=70℃） Maximum Power Dissipation PD(TA=25℃) PD(TA=70℃) Thermal Resistance,Junction‐to‐Ambient (Note 2) RθJA(t≤10s) RθJA(Steady State) Thermal Resistance,Junction‐to‐Case RθJC(Steady State) Maximum Operating Junction Temperature TJ Storage Temperature Range TSTG Limit 30 +20 54 34 100 26.6 10.6 15.2 12.1 2.08 1.3 40 60 4.7 150 ‐55 To 150 Unit V V A...
