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TDM3548 Datasheet PDF

Techcode TDM3548

The TDM3548 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.
Part No. TDM3548
Datasheet TDM3548 Download
Manufacturer
Techcode
Description N-Channel Enhancement Mode MOSFET
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TDM3548 datasheet page 1 preview

DESCRIPTION

GENERAL FEATURES

● RDS(ON) < 11mΩ @ VGS=4.5V RDS(ON) < 6.8mΩ @ VGS=10V
● High Power and current handling capability
● Lead free product is available
● Surface Mount Package Application
● PWM applications
● Load switch
● Power management DATASHEET TDM3548 PPAK-3*3-8

ABSOLUTE MAXIMUM RATINGS

(TA=25℃unless otherwise noted) Parameter Symbol Drain‐Source Voltage VDS Gate‐Source Voltage VGS Drain Current @ Continuous ID(TC=25℃) ID(TC=100℃) Drain Current @ Current‐Pulsed (Note 1) IDM(TC=25℃) Maximum Power Dissipation PD(TC=25℃) PD(TC=100℃) Drain Current @ Continuous ID(TA=25℃) ID(TA=70℃) Maximum Power Dissipation PD(TA=25℃) PD(TA=70℃) Thermal Resistance,Junction‐to‐Ambient (Note 2) RθJA (t≤10s) RθJA (Steady State) Thermal Resistance,Junction‐to‐Case RθJC (Steady State) Maximum Operating Junction Temperature TJ Storage Temperature Range TSTG Limit 30 +20 57 36 100 31.3 12.5 13 10 2.08 1.3 40 60 4 150 ‐55 To 150 Unit V V A A A W A A W ℃/W ℃/W ℃ ℃ May 23, 2017 Techcode Semiconductor L...
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