Techcode TDM3578
The TDM3578 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.| Part No. | TDM3578 |
|---|---|
| Datasheet | TDM3578 Download |
| Manufacturer |  Techcode |
| Description | N-Channel Enhancement Mode MOSFET |
| Buy | Stock & Price |
DESCRIPTION
GENERAL FEATURES
● RDS(ON) <6.7mΩ @ VGS=10V RDS(ON) < 10.3mΩ @ VGS=4.5V● High Power and current handling capability
● Lead free product is available
● Surface Mount Package Application
● PWM applications
● Load switch
● Power management DATASHEET TDM3578 PPAK-3*3-8
ABSOLUTE MAXIMUM RATINGS
(TA=25℃unless otherwise noted) Parameter Symbol Drain‐Source Voltage VDS Gate‐Source Voltage VGS Diode Continuous Forward Current Drain Current @ Continuous IS（TC=25℃） ID（TC=25℃） ID（TC=100℃） Drain Current @ Current‐Pulsed IDM（TC=25℃） Maximum Power Dissipation (TC=25℃) PD(TC=25℃) PD(TC=100℃) Drain Current @ Continuous(Note a) ID（TA=25℃） ID（TA=70℃） Drain Current @ Current‐Pulsed (Note b) IDM（TA=25℃） Maximum Power Dissipation(Note a) PD(TA=25℃) PD(TA=70℃) Maximum Operating Junction Temperature TJ Storage Temperature Range TSTG Thermal Resistance,Junction‐to‐Case RθJC Thermal Resistance,Junction‐to‐Ambient (Note a) RθJA Limit 40 +20 20 61 43 244 50 23.5 14.2 12 57 2.5 1.8 175 ‐55 To 175 4.5 6...
