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TDM3660 - N-Channel Enhancement Mode MOSFET

Description

The  TDM3660  uses  advanced  trench  technology  to  provide  excellent  RDS(ON)  and  low  gate  charge.

This  device  is  suitable  for  use  as  a  load  switch  or  in    PWM  applications.

Features

  • RDS(ON) .

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Datasheet Details

Part number TDM3660
Manufacturer Techcode
File Size 417.58 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet TDM3660 Datasheet

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Full PDF Text Transcription

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T  echcode®       N-Channel Enhancement Mode MOSFET DESCRIPTION  The  TDM3660  uses  advanced  trench  technology  to  provide  excellent  RDS(ON)  and  low  gate  charge.  This  device  is  suitable  for  use  as  a  load  switch  or  in    PWM  applications.  GENERAL FEATURES   RDS(ON) < 13mΩ @ VGS=4.5V    RDS(ON) < 10.
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