Datasheet4U Logo Datasheet4U.com

TDM4953 - P-Channel Enhancement Mode MOSFET

Description

The TDM4953 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a load switch or in PWM applications.

Features

  • VDS = -30V,ID = -5.1A RDS(ON) < 85mΩ @ VGS=-4.5V RDS(ON) < 53mΩ @ VGS=-10V.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package D1 D2 G1 G2 S1 S2 Schematic diagram Marking and pin Assignment.

📥 Download Datasheet

Datasheet Details

Part number TDM4953
Manufacturer Techcode
File Size 268.04 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet TDM4953 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
TDM150 Twin Diode Module Microsemi Corporation
TDM15002 Twin Diode Module Microsemi Corporation
TDM15004 Twin Diode Module Microsemi Corporation
TDM15006 Twin Diode Module Microsemi Corporation
TDM15008 Twin Diode Module Microsemi Corporation

Other Datasheets by Techcode

Part Number Description
TDM2301 P-Channel Enhancement Mode MOSFET
TDM2301S P-Channel Enhancement Mode MOSFET
TDM2302 N-Channel Enhancement Mode MOSFET
TDM2302S N-Channel Enhancement Mode MOSFET
TDM2305 P-Channel Enhancement Mode MOSFET

Full PDF Text Transcription

Click to expand full text
    P-Channel Enhancement Mode Power MOSFET   Datasheet TDM4953 DESCRIPTION The TDM4953 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = -30V,ID = -5.1A RDS(ON) < 85mΩ @ VGS=-4.
Published: |