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TD99102 - High-speed FET and GaN Transistor Driver

Datasheet Summary

Description

The TD99102 is an integrated high-speed driver designed to control the gates of external power devices such as enhancement mode gallium nitride (GaN) High Electron Mobility Transistor (HEMT) and power MOSFETs.

Features

  • TID = 100 krad(Si).
  • SEL Immune.
  • High- and Low-side FET drivers.
  • Dead-time control.
  • Fast propagation delay, 9 ns.
  • Tri-state enable mode.
  • Sub-nanosecond rise and fall time.
  • 2 A / 4 A peak source/sink current.
  • Bumped flip chip die.

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Datasheet preview – TD99102

Datasheet Details

Part number TD99102
Manufacturer Teledyne
File Size 1.35 MB
Description High-speed FET and GaN Transistor Driver
Datasheet download datasheet TD99102 Datasheet
Additional preview pages of the TD99102 datasheet.

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    Full PDF Text Transcription

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    TD99102 - Die Specifications UltraCMOS® High-speed FET and GaN Transistor Driver, 20 MHz Product Specification Features • TID = 100 krad(Si) • SEL Immune • High- and Low-side FET drivers • Dead-time control • Fast propagation delay, 9 ns • Tri-state enable mode • Sub-nanosecond rise and fall time • 2 A / 4 A peak source/sink current • Bumped flip chip die Applications • dc–dc conversions • ac–dc conversions • Orbital Point of Load (POL) module power distribution • Motor driver Product Description The TD99102 is an integrated high-speed driver designed to control the gates of external power devices such as enhancement mode gallium nitride (GaN) High Electron Mobility Transistor (HEMT) and power MOSFETs.
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