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TDG650E60 - Bottom- or Top-side Cooled 650V E-mode GaN FET

Description

Systems Technology.

with very high switching frequency.

Features

  • 650 V enhancement mode power switch with P-GaN gate structure.
  • Bottom- or Top-side cooled configuration.
  • RDS(on) = 25 mΩ (typ).
  • IDS(max) = 60 A.
  • Ultra-low FOM Island Technology® die.
  • Ultra-low inductance GaNPX® package.
  • Easy gate drive requirements (0 V to 6 V) with 7V tolerance.
  • Transient tolerant gate drive (-20 / +10 V) 1μs.
  • Very high switching frequency (> 10 MHz).
  • Reverse current capability.

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Datasheet Details

Part number TDG650E60
Manufacturer Teledyne
File Size 2.66 MB
Description Bottom- or Top-side Cooled 650V E-mode GaN FET
Datasheet download datasheet TDG650E60 Datasheet
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TDG650E60 Bottom- or Top-side Cooled 650 V E-mode GaN FET Product Specification April 2020 Features • 650 V enhancement mode power switch with P-GaN gate structure • Bottom- or Top-side cooled configuration • RDS(on) = 25 mΩ (typ) • IDS(max) = 60 A • Ultra-low FOM Island Technology® die • Ultra-low inductance GaNPX® package • Easy gate drive requirements (0 V to 6 V) with 7V tolerance • Transient tolerant gate drive (-20 / +10 V) 1μs • Very high switching frequency (> 10 MHz) • Reverse current capability • Zero reverse recovery loss • Small 11 x 9 mm2 PCB footprint • Source Sense (SS) pads for optimized gate drive • Dual gate and source sense pads for optimal board layout • RoHS compliant • Single diffusion lot available • Enhanced wafer level reliability • HiRel qualification flow • Ob
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