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TDRM24C512C-L - 512K-bit Non-volatile Serial Memory

Description

Adesto's CBRAM® resistive technology.

The memory device uses a single lowvoltage supply ranging from 1.65V to 3.3V.

Features

  • Memory array: 512Kb EEPROM-compatible non-volatile serial memory for harsh environments.
  • Single supply voltage: 1.65V - 3.3V.
  • 2-wire I2C interface.
  • Compatible with I2C bus modes: -100kHz -400kHz -1MHz.
  • Page size: 128 bytes.
  • Low Energy Byte Write (50 nJ).
  • Low Power Consumption.
  • Fast Write.
  • Random and sequential Read modes.
  • Write protect of the whole memory array.
  • 10-lead Ceramic Flat Package - Gull Wing.
  • Data Retention: >40 years @125.

📥 Download Datasheet

Datasheet Details

Part number TDRM24C512C-L
Manufacturer Teledyne
File Size 1.94 MB
Description 512K-bit Non-volatile Serial Memory
Datasheet download datasheet TDRM24C512C-L Datasheet

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Full PDF Text Transcription

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TDRM24C512C-L 512K-bit Non-volatile Serial Memory I2C Bus Product Specification 07/2019 Features  Memory array: 512Kb EEPROM-compatible non-volatile serial memory for harsh environments  Single supply voltage: 1.65V - 3.
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