TFG1200 - 200V High Side / Low Side eGaN Gate Driver

Description

Floating high-side driver in bootstrap operation to 200V 1.2A/5A peak source/sink current 0.4Ω/2Ω pull down/pull up impedance Internal bootstrap supply voltage clamped to 5.2V Independent high-side and low-side logic inputs Proprietary bootstrap capacit

Telefunken

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Datasheet Details

Part number	TFG1200
Manufacturer	Telefunken
File Size	373.63 KB
Description	200V High Side / Low Side eGaN Gate Driver
Datasheet	TFG1200 Datasheet
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ADVANCE INFO TFG1200 200V High-Side / Low-Side eGaN Gate Driver Features Description  Floating high-side driver in bootstrap operation to 200V  1.2A/5A peak source/sink current  0.4Ω/2Ω pull down/pull up impedance  Internal bootstrap supply voltage clamped to 5.2V  Independent high-side and low-side logic inputs  Proprietary bootstrap capacitor auto-recharge technology  Fast propagation delays (25ns typical)  Separate source and sink outputs Applications The TFG1200 is a high-side/low-side gate driver uniquely designed to drive enhancement mode Gallium Nitride (eGaN) FETs. The TFG1200 provides the special requirements of an eGaN FET driver: supply clamping, low pull-up and pull-down impedance, and high peak currents all within a single IC.

Published: Jun 4, 2014 |