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SMD10P06L
P-Channel Enhancement-Mode Transistor
Product Summary
VDS (V) –60
rDS(on) (W) 0.28 @ VGS = –10 V 0.35 @ VGS = –4.5 V
IDa (A) –10 –7.5
DPAK (TO-252)
D
S G
G
S
Top View
D P-Channel MOSFET
Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Currentb
TA = 25_C TA = 100_C
Pulsed Drain Current (maximum current limited by package)
Maximum Power Dissipation Operating Junction and Storage Temperature Range
TC = 25_C TA = 25_C
VDS VGS ID IDM PD TJ, Tstg
–60 V
"20
–2.0
–1.2
A
–16
40 W
2.0b
–55 to 175
_C
Thermal Resistance Ratings
Parameter
Symbol
Typical
Maximum Unit
Junction-to-Ambient Free Airb Junction-to-Case
RthJA
RthJC
2.3
60 _C/W
3.0
Notes:
a.
SMD10P06L Datasheet
