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TCDF1910 - Optocoupler

Download the TCDF1910 datasheet PDF. This datasheet also covers the TCDF1900 variant, as both devices belong to the same optocoupler family and are provided as variant models within a single manufacturer datasheet.

Description

The TCDF1900/ TCDF1910 consist of two MOS FET transistors connected with a photovoltaic element, optically coupled to a gallium arsenide infrared emitting diode in a 6 lead plastic dual inline packages.

Features

  • D Peak off state voltage TCDF1900: VOFF = 400 V min TCDF1910: VOFF = 250 V min D Input threshold current IFT = 5 mA max D On state current TCDF1900: ION = 125 mA max TCDF1910: ION = 200 mA max D On state resistance TCDF1900: RON = 24 W max TCDF1910: RON = 12 W max Connection Table Pin Connection 654 123 93 7534 1 Anode 2 Cathode 3 NC 4 Drain D1 5 Source 6 Drain D2 16 25 34 94 8716 A connection Load AC or ~ DC 16 25 34 94 8717 B connection Load DC Rev. A1: 21.09.1995 1 (6) TCDF1900/.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (TCDF1900-Temic.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number TCDF1910
Manufacturer Temic
File Size 69.48 KB
Description Optocoupler
Datasheet download datasheet TCDF1910 Datasheet

Full PDF Text Transcription

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TELEFUNKEN Semiconductors TCDF1900/ TCDF1910 Optocoupler with Photo-MOS FET Description The TCDF1900/ TCDF1910 consist of two MOS FET transistors connected with a photovoltaic element, optically coupled to a gallium arsenide infrared emitting diode in a 6 lead plastic dual inline packages.
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