Description
The TCDF1900/ TCDF1910 consist of two MOS FET transistors connected with a photovoltaic element, optically coupled to a gallium arsenide infrared emitting diode in a 6 lead plastic dual inline packages.
Features
- D Peak off state voltage TCDF1900: VOFF = 400 V min TCDF1910: VOFF = 250 V min
D Input threshold current IFT = 5 mA max
D On state current TCDF1900: ION = 125 mA max TCDF1910: ION = 200 mA max
D On state resistance TCDF1900: RON = 24 W max TCDF1910: RON = 12 W max
Connection Table
Pin Connection
654
123
93 7534
1 Anode 2 Cathode 3 NC 4 Drain D1 5 Source 6 Drain D2
16
25
34
94 8716
A connection
Load
AC or
~
DC
16
25
34
94 8717
B connection
Load DC
Rev. A1: 21.09.1995
1 (6)
TCDF1900/.
TCDF1910 Datasheet
