55NF06
Description
12 3 TO-251/IPAK Thinkisemi 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed.
Key Features
- 12 3 TO-252/DPAK
- RDS(ON) = 23mȍ@VGS = 10 V
- Ultra low gate charge ( typical 30 nC )
- Low reverse transfer capacitance ( CRSS = typical 80 pF )
- Fast switching capability
- 100% avalanche energy specified
- Improved dv/dt capability
